Signing a grant agreement

We are pleased to announce that an agreement has been signed for co-financing the project entitled "Complete vertically integrated technological chain for vertical GaN-on-GaN power electronics: from GaN substrate to Intelligent Energy Bank", concluded between the National Center for Research and Development and the Institute of High Pressure Physics of the Polish Academy of Sciences, which is the leader and acting on behalf of the consortium which also includes the Łukasiewicz Research Network - Institute of Microelectronics and Photonics, Dacpol and Inwebit. Now we can fully devote ourselves to substantive work on the project. The implementation of the project will contribute to the introduction of modern, efficient, and competitive energy banks to the market and will revolutionize the transistor market, all in the domestic production, based on national patents.

The EnerGaN project is implemented as part of the TechMatStrateg strategic program, supporting research and development in the field of material technologies. As part of the project, an Intelligent Energy Bank will be developed, whose competitive advantage will be unusual material properties obtained through the use of gallium nitride, and intelligence allowing for more effective management of energy sales or securing energy for own needs.

Basic information about the project can be found at https://inwebit.com/en/eu-intelligent-energy-bank